2SJ690_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ690
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ690 is a P-channel MOSFET designed for power switch
of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16^{+–00..016}
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 119 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)2 = 217 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ690-T1B-AT
SC-96 (Mini Mold Thin Type)
Remark “-AT” indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
“-T1B” indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
Marking: XT
3
1
2
0 to 0.1
0.95 0.95
1.9
2.9±0.2
0.65
0.9 to 1.1
1: Gate
2: Source
3: Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
m2.5
A
ID(pulse)
m10
A
Total Power Dissipation
Total Power Dissipation ^Note2
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board, t ≤ 5 sec.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19954EJ1V0DS00 (1st edition)
Date Published September 2009 NS
Printed in Japan
2009