2SJ690_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-12
Pulsed
-10
−4.5 V
-8
-6
VGS = −2.5 V
-4
-2
-0
-0
-0.5
-1
-1.5
-2
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1.5
VDS = −10 V
ID = −1.0 mA
-1
2SJ690
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = −10 V
Pulsed
TA = 125°C
-1
75°C
25°C
-0.1
−25°C
-0.01
-0.001
-0 -0.5 -1 -1.5 -2 -2.5 -3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = −10 V
Pulsed
TA = −25°C
25°C
75°C
1
125°C
-0.5
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
PPuullsseedd
150
−2.5 V
100
VGS = −4.5 V
50
0
-0.1
-1
-10
ID - Drain Current - A
-100
0.1
-0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
ID = −1.0 A
Pulsed
150
100
50
0
-0 -2 -4 -6 -8 -10 -12
VGS - Gate to Source Voltage - V
4
Data Sheet D19954EJ1V0DS