2SC5945 Datasheet, PDF (7/36 Pages) Renesas Technology Corp – Si NPN Epitaxial High Frequency Medium Power Amplifier

2SC5945
S₁₁ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
-10
-.2
-5
-4
-3
-.4
-2
-.6
-.8 _-1
-1.5
Condition: V_CE = 3.6 V, ZO = 50 Ω
400 to 3000 MHz (100 MHz Step)
(I_C = 100 mA)
(I_C = 250 mA)
S₂₁ Parameter vs. Frequency
90°
Scale: 3 / div.
120°
60°
150°
30°
180°
0°
-150°
-30°
-120°
-60°
-90°
Condition: V_CE = 3.6 V, ZO = 50 Ω
400 to 3000 MHz (100 MHz Step)
(I_C = 100 mA)
(I_C = 250 mA)
S₁₂ Parameter vs. Frequency
90° ^{Scale: 0.03 / div.}
120°
60°
150°
30°
180°
0°
-150°
-30°
-120°
-60°
-90°
Condition: V_CE = 3.6 V, ZO = 50 Ω
400 to 3000 MHz (100 MHz Step)
(I_C = 100 mA)
(I_C = 250 mA)
S₂₂ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
-10
-.2
-5
-4
-3
-.4
-2
-.6
-.8 _-1
-1.5
Condition: V_CE = 3.6 V, ZO = 50 Ω
400 to 3000 MHz (100 MHz Step)
(I_C = 100 mA)
(I_C = 250 mA)
Rev.3.00 Aug 03, 2006 page 7 of 35