2SC5945 Datasheet, PDF (4/36 Pages) Renesas Technology Corp – Si NPN Epitaxial High Frequency Medium Power Amplifier

2SC5945
Pin-Pout Characteristics
+
* 1 µF
-
V_BB : Bias Adjustment ^{0.22 nF 1000 pF}
100 pF // 15 pF
22 Ω
15 pF
10 nH
IN
0.75 pF 1.0 nH
0.5 pF
Output Power, Power Added Efficiency
vs. Input Power
30
100
Vcc = 3.3 V
f = 2.4 GHz
Pout
25 ^{Icq = 100 mA}
80
20
PAE
60
15
40
10
20
5
0
0 5 10 15 20 25 30
Input Power Pin (dBm)
+ _{* 1 µF}
-
1000 pF 0.22 nF
V_CC = +3.3 V
100 pF // 15 pF
4.7 nH
22 nH 0.75 pF
1 pF
OUT
Output Power, Power Added Efficiency
vs. Input Power
30
100
Vcc = 3.3 V
f = 2.4 GHz
Pout
25 Icq = 250 mA
80
20
PAE
60
15
40
10
20
5
0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Power Gain vs. Input Power
20
Vcc = 3.3 V
f = 2.4 GHz
Icq = 100 mA
15
10
5
0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Power Gain vs. Input Power
20
Vcc = 3.3 V
f = 2.4 GHz
Icq = 250 mA
15
10
5
0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Rev.3.00 Aug 03, 2006 page 4 of 35