2SC5945 Datasheet, PDF (1/36 Pages) Renesas Technology Corp – Si NPN Epitaxial High Frequency Medium Power Amplifier

2SC5945
Si NPN Epitaxial
High Frequency Medium Power Amplifier
Features
• Excellent Linearity
P1dB at output = +26 dBm typ. f = 2.4 GHz
• High Collector to Emitter Voltage
V_CEO = 5 V
• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
• 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm).
Outline
RENESAS Package code: PWSN0006JA-A
(Package name: HWSON-6 <TNP-6DTV>)
654
7
654
7
Note: Marking is “5945”.
123
123
REJ03G0443-0300
Rev.3.00
Aug 03, 2006
1. Collector
2. Collector
3. Collector
4. Emitter
5. Base
6. Emitter
7. Emitter
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Ratings
13
5
1.5
500
1^Note
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
W
°C
°C
Rev.3.00 Aug 03, 2006 page 1 of 35