2SC5945 Datasheet, PDF (3/36 Pages) Renesas Technology Corp – Si NPN Epitaxial High Frequency Medium Power Amplifier

2SC5945
Typical Transfer Characteristics
500
V_CE = 3 V
400
300
200
100
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.5
I_E = 0
f = 1 MHz
1.0
0.5
0
1
2
3
4
5
Collector to Base Voltage V_CB (V)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
30
V_CE = 3 V
MAG
25
MSG
f = 0.5 GHz
20
1.0 GHz
15
1.8 GHz
10
2.4 GHz
5
0
1
10
100
1000
Collector Current I_C (mA)
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 3 V
150
100
50
0
1
10
100
1000
Collector Current I_C (mA)
Transition Frequency vs.
Collector Current
20
V_CE = 3 V
f = 1 GHz
15
10
5
0
1
10
100
1000
Collector Current I_C (mA)
S₂₁ Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
40
V_CE = 3 V
I_C = 100 mA
30
MSG
20
MAG
10
|S₂₁|²
0
0.1
1
10
Frequency f (GHz)
Rev.3.00 Aug 03, 2006 page 3 of 35