2SC5945 Datasheet, PDF (2/36 Pages) Renesas Technology Corp – Si NPN Epitaxial High Frequency Medium Power Amplifier

2SC5945
Electrical Characteristics
Item
DC current transfer ratio
Reverse Transfer Capacitance
Symbol Min
h_FE
110
C_re

Transition Frequency
f_T

Maximum Available Gain
MAG

Power Gain
Power Added Efficiency
PG
4
PAE
30
1dB Compression Point at output
P1dB

1dB Compression Point at output
P1dB

Typ
150
1.0
15.5
9
6
40
+24
+26
Max
190







Unit

pF
GHz
dB
dB
%
dBm
dBm
(Ta = 25°C)
Test Conditions
V_CE = 3 V, I_C = 100 mA
V_CB = 2 V, I_E = 0, f = 1 MHz,
emitter grounded
V_CE = 3 V, I_C = 100 mA,
f = 1 GHz
V_CE = 3 V, I_C = 100 mA,
f = 2.4 GHz
V_CE = 3.3 V, I_Cq = 100 mA,
f = 2.4 GHz, Pin= +20 dBm
V_CE = 3.3 V, I_Cq = 100 mA,
f = 2.4 GHz
V_CE = 3.3 V, I_Cq = 250 mA,
f = 2.4 GHz
Main Characteristics
Collector Power Dissipation Curve
1.5
*(40 x 40 x 1 mm)
Value on PCB
1.0
0.5
Typical Output Characteristics
500
4.0 mA
3.5 mA
400
3.0 mA
2.5 mA
300
2.0 mA
1.5 mA
200
1.0 mA
100
I_B = 0.5 mA
0
50
100
150
200
Ambient Temperature Ta (°C)
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Rev.3.00 Aug 03, 2006 page 2 of 35