RJH65T46DPQ-A0 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Power Factor Correction circuit

RJH65T46DPQ-A0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
V_GE = 0 V Tc = 25°C
f = 1 MHz
Cies
100
Coes
Cres
10
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Forward Current (Typical)
1000
V_CC = 300 V
di_F/dt = 300 A/us
Tc = 150°C
100
25°C
10
1
10
100
Forward Current I_F (A)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_CC = 400 V
I_C = 40 A
Tc = 25°C
V_GE
600
12
400
8
200
0
0
4
V_CE
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Current vs. Forward Voltage (Typical)
100
80
Tc = 25°C
60
150°C
40
20
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
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