RJH65T46DPQ-A0 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Power Factor Correction circuit

RJH65T46DPQ-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
I_C = 80 A
40 A
3
20 A
2
1
0
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
4
1.33 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
120
100
80
Ic(max)
60
0
Collector current wave
40
(Square wave)
20 Tj = 175°C, Tc = 90°C, V_CE = 400 V
V_GE = 15 V, Rg = 10Ω , duty = 50%
0
1
10
100
Frequency f (kHz)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
I_C = 80 A
Tc = 150°C
Pulse Test
4
40 A
20 A
3
2
1
0
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
V_GE = 15 V
3.5 ^{Pulse Test}
3.0
I_C = 80 A
2.5
40 A
2.0
1.5
20 A
1.0
0.5
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
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