RJH65T46DPQ-A0 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Power Factor Correction circuit

RJH65T46DPQ-A0
Switching Characteristics (Typical) (1)
1000
V_CC = 400 V, V_GE = 15 V
Rg = 10 Ω, Tc = 150°C
td(off)
100
tf
td(on)
tr
10
10
20 30
50 70 100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
V_CC = 400 V, V_GE = 15 V
I_C = 40 A, Tc = 150°C
1000
100
10
1
td(off)
tf
tr
td(on)
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 40 A, Rg = 10 Ω
td(off)
100
tf
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Preliminary
Switching Characteristics (Typical) (2)
10
V_CC = 400 V, V_GE = 15 V
Rg = 10 Ω, Tc = 150°C
1
Eoff
Eon
0.1
10
20 30
50 70 100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
V_CC = 400 V, V_GE = 15 V
I_C = 40 A, Tc = 150°C
1
Eoff
Eon
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
V_CC = 400 V, V_GE = 15 V
I_C = 40 A, Rg = 10 Ω
1
Eoff
Eon
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
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