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| RJH65T46DPQ-A0 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Power Factor Correction circuit | |||
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Preliminary Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT
Application: Power Factor Correction circuit
R07DS1259EJ0100
Rev.1.00
May 18, 2015
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
ï· Built in fast recovery diode in one package
ï· Trench gate and thin wafer technology (G7H series)
ï· High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 ï, Ta = 25°Cï¬ï ï Inductive load)
ï· Operation frequency (20kHz ⤠f Ë 100kHz)
ï· Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES / VR
VGES
IC
IC
iC(peak) Note1
IDF
IDF
iDF(peak) Note1
PC
ï±j-c
650
ï±30
80
40
300
30
15
100
340.9
0.44
V
V
A
A
A
A
A
A
W
°C/W
Junction to case thermal resistance (Diode)
Junction temperature
ï±j-cd
Tj Note2
1.33
°C/ W
175
°C
Storage temperature
Tstg
â55 to +150
°C
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 1 of 9
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