RJH65T46DPQ-A0 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Power Factor Correction circuit

RJH65T46DPQ-A0
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
ICES / IR

Gate to emitter leak current
IGES

Gate to emitter cutoff voltage
VGE(off)
4.0
Collector to emitter saturation voltage VCE(sat)

Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Turn-on delay time
td(on)

Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Turn-on loss energy
Eon
—
Turn-off loss energy
Eoff
—
Total switching energy
Etotal
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Turn-on loss energy
Eon
—
Turn-off loss energy
Eoff
—
Total switching energy
Etotal
—
Typ



1.8
3000
92
55
138
22
57
45
30
170
45
0.45
0.55
1.00
45
30
185
50
0.57
0.63
1.20
Max
100
±1
7.0
2.4
—
—
—
—
—
—

—
—
—
—
—
—
—
—
—
—
—
—
—
FRD forward voltage
VF
—
1.7
2.2
FRD reverse recovery time
trr
—
100
—
Notes: 3. Pulse test
4. Switching time test circuit and waveform are shown below.
(Ta = 25°C)
Unit
Test Conditions
A VCE = 650 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10V, IC = 1.33 mA
V
IC = 40 A, VGE = 15V ^Note3
pF VCE = 25 V
pF ^VGE ^{= 0}
pF ^{f = 1 MHz}
nC VGE = 15 V
nC VCE = 400 V
nC ^{IC = 40 A}
ns VCC = 400 V
ns ^VGE ^{= 15 V}
ns ^{IC = 40 A}
ns ^{Rg = 10 }
mJ
TC = 25 °C
Inductive load ^Note4
mJ
mJ
ns VCC = 400 V
ns ^VGE ^{= 15 V}
ns ^{IC = 40 A}
ns ^{Rg = 10 }
mJ
TC = 150 °C
Inductive load ^Note4
mJ
mJ
V
IF = 15 A ^Note3
ns IF = 15 A, diF/dt = 300 A/s
R07DS1259EJ0100 Rev.1.00
May 18, 2015
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