RJH1CV7DPK Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 1200V - 35A - IGBT Application: Inverter

RJH1CV7DPK
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Tc = 25°C
1
0
40 80
Cres
120 160 200
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
600
V_CC = 400 V
500
I_F = 35 A
400
300
Tc = 150°C
200
25°C
100
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
30
V_CC = 400 V
25 ^{IF = 35 A}
20
Tc = 150°C
15
10
25°C
5
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_C = 35 A
V_CC = 300 V
Tc = 25°C
600
16
V_GE
12
400
8
200
4
V_CE
0
0
40
0
80 120 160 200
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
3.0
V_CC = 400 V
2.5 ^{IF = 35 A}
2.0
Tc = 150°C
1.5
1.0
0.5
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
100 ^{VCE = 0 V}
Pulse Test
80
Tc = 25°C
60
40
150°C
20
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
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