RJH1CV7DPK Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 1200V - 35A - IGBT Application: Inverter

RJH1CV7DPK
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
3
I_C = 70 A
2
35 A
Tc = 25°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
100
80
Tc= 25°C
150°C
60
40
20
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
I_C = 70 A
3
35 A
2
Tc = 150°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
V_GE = 15 V
3.5 ^{Pulse Test}
3.0
I_C = 70 A
2.5
35 A
2.0
1.5
1.0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
30
25
0
Collector current wave
20
(Square wave)
15
Tj = 125°C
10
Tc = 90°C
V_CE = 400 V
V_GE = 15 V
5
Rg = 5 Ω
duty = 50%
0
1
10
100
1000
Frequency f (kHz)
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
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