RJH1CV7DPK Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 1200V - 35A - IGBT Application: Inverter

RJH1CV7DPK
Switching Characteristics (Typical) (1)
1000
t_f
td(o_ff)
100
td(on)
10
tr
V_CC = 600 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
t_f
td(o_ff)
100
tr
td(on)
V_CC = 600 V, V_GE = 15 V
10 ^{IC = 35 A, Tc = 150°C}
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
t_f
td(o_ff)
100
td(on)
tr
10
25
V_CC = 600 V, V_GE = 15 V
I_C = 35 A, Rg = 5 Ω
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100
V_CC = 600 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
10
Eon
Eoff
1
0.1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Eon
Eoff
1
V_CC = 600 V, V_GE = 15 V
0.1 ^{IC = 35 A, Tc = 150°C}
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
Eon
Eoff
1
V_CC = 600 V, V_GE = 15 V
I_C = 35 A, Rg = 5 Ω
0.1
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
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