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RJH1CV7DPK Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 1200V - 35A - IGBT Application: Inverter | |||
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RJH1CV7DPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
ICES /IR
â
Gate to emitter leak current
IGES
â
Gate to emitter cutoff voltage
VGE(off)
4.5
Collector to emitter saturation voltage VCE(sat)
â
VCE(sat)
â
Input capacitance
Cies
â
Output capacitance
Coes
â
Reverse transfer capacitance
Cres
â
Total gate charge
Qg
â
Gate to emitter charge
Qge
â
Gate to collector charge
Qgc
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Turn-on energy
Eon
â
Turn-off energy
Eoff
â
Total switching energy
Etotal
â
Short circuit withstand time
tsc
â
FRD forward voltage
VF
â
FRD reverse recovery time
trr
â
FRD reverse recovery charge
Qrr
â
FRD peak reverse recovery current
Irr
â
Notes: 3. Pulse test.
Preliminary
Typ
â
â
â
1.8
2.5
2075
100
55
166
20
95
53
45
185
280
3.2
2.5
5.7
5
2.1
200
0.7
9.6
Max
5
±1
6.5
2.3
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
â
(Ta = 25°C)
Unit
Test Conditions
ïA VCE = 1200 V, VGE = 0
ïA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 35 A, VGE = 15 V Note3
Vï
IC = 70 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 35 A
ns VCC = 600 V
ns VGE = 15 V
ns IC = 35 A
ns Rg = 5 ïï
mJï Inductive load
mJï
mJï
ïs VCC ï£ 720 V, VGE = 15 V
Tc ï£ 125°C
V
IF = 35 A Note3
ns IF = 35 A
ïC diF/dt = 100 A/ïs
A
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 2 of 9
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