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| RJH1CV7DPK Datasheet, PDF (1/10 Pages) Renesas Technology Corp – 1200V - 35A - IGBT Application: Inverter | |||
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Preliminary Datasheet
RJH1CV7DPK
1200V - 35A - IGBT
Application: Inverter
R07DS0748EJ0300
Rev.3.00
Feb 14, 2013
Features
ï· Short circuit withstand time (5 ïs typ.)
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)
ï· Built-in fast recovery diode (trr = 200 ns typ.) in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 ï, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
12 3
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
ï±j-c Note2
ï±j-cd Note2
Tj
Tstg
Ratings
1200
ï±30
70
35
105
35
105
320
0.39
0.69
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 1 of 9
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