NP30N04QUK_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – 40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

NP30N04QUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
14
12
10
8
6
4
2
0
–100 –50 0
V_GS = 10 V
I_D = 15 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
V_DD = 20 V
V_GS = 10 V
R_G = 0 Ω
10
td(off)
td(on)
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V_GS = 10 V
100
V_GS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_F(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
Coss
Crss
V_GS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
30
V_DD = 32 V
12
20 V
25
8V
10
20
8
15
6
10
V_GS
4
V_DS
5
2
I_D = 30 A
0
0
0
5 10 15 20 25 30
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
I_F - Drain Current - A
R07DS1227EJ0100 Rev.1.00
Nov 18, 2014
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