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| NP30N04QUK_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive | |||
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NP30N04QUK
40 V â 30 A â Dual N-channel Power MOS FET
Application: Automotive
Data Sheet
R07DS1227EJ0100
Rev.1.00
Nov 18, 2014
Description
NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
⯠RDS(on) = 8 mΩ MAX. (VGS = 10 V, ID = 15 A)
⢠Low Ciss: Ciss = 1600 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
⢠Small size package 8-pin HSON dual
Outline
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Source 1
Source 2
8-pin HSON dual
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP30N04QUK-E1-AY *1
NP30N04QUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON dual
R07DS1227EJ0100 Rev.1.00
Nov 18, 2014
Page 1 of 7
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