NP30N04QUK_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – 40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

NP30N04QUK
140
120
100
80
60
40
20
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V_GS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
V_DS = V_GS
I_D = 250 μA
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
16
14
12
10
8
6
4
2
V_GS = 10 V
Pulsed
0
0.1
1
10
100
1000
I_D - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
10
T_A = –55°C
–40°C
25°C
1
75°C
125°C
175°C
0.1
0.01
0.001
0
V_DS = 10 V
Pulsed
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T_A = –55°C
–40°C
25°C
75°C
125°C
10
175°C
V_DS = 5 V
Pulsed
1
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
16
14
12
I_D = 6 A
15 A
30 A
10
8
6
4
2
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
R07DS1227EJ0100 Rev.1.00
Nov 18, 2014
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