NP30N04QUK_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – 40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

NP30N04QUK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(ON) Limited
(VGS=10 V)
I_D(Pulse) = 120 A
I_D(DC) = 30 A
10
PW _{= 100 μs}
Power Dissipation Limited
1
Secondary Breakdown Limited
0.1
T_C = 25°C
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 150°C/W
10
R_th(ch-C) = 2.54°C/W
1
0.1 _{One channel operation}
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm)
0.01
100 μ
1m
10 m 100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1227EJ0100 Rev.1.00
Nov 18, 2014
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