HAF2026RJ Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAF2026RJ
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
8
V_DD = 16 V
6
24 V
4
2
0
0.001
0.01
0.1
1
Shutdown Time of Lord-Short Test
PW (S)
Avalanche Energy vs.
Channel Temperature Derating
2.0
I_AP = 0.6 A
V_DD = 25 V
1.5
duty < 0.1 %
Rg > 50 Ω
1
0.5
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V_DS
Monitor
Rg
L
I_AP
Monitor
D. U. T
V_DD
Vin
50 Ω
5V
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Avalanche Waveform
E_AR =
1
2
• L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Rev.2.00 Jun 02, 2006 page 6 of 8