HAF2026RJ Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAF2026RJ
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
60
Gate to source voltage
V_GSS
16
Gate to source voltage
V_GSS
–2.5
Drain current
I_D
0.6
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Cannel dissipation
Cannel dissipation
I_DR
I_APNote3
E_ARNote3
Pch^Note1
Pch^Note2
1
0.6
1.54
1
1.5
Cannel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Tc = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current (Current limitation)
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
I_{D limt}
Min
3.5
—
—
—
—
—
—
—
3.5
0.6
Typ
—
—
—
—
—
0.53
0.23
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
1.0
Unit
V
V
µA
µA
µA
mA
mA
°C
V
A
(Ta=25°C)
Test Conditions
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Vi = 1.2 V, V_DS = 0
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Cannel temperature
Vi = 5 V, V_DS = 3 V
Rev.2.00 Jun 02, 2006 page 2 of 8