HAF2026RJ Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAF2026RJ
Silicon N Channel Power MOS FET
Power Switching
REJ03G1255-0200
Rev.2.00
Jun 02, 2006
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (5 to 6 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
• Built-in the current limitation circuit
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 ^{7 65}
1 ²³⁴
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
DD
78
DD
56
2
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
MOS1
S
4
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
3
MOS2
S
Rev.2.00 Jun 02, 2006 page 1 of 8