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HAF2026RJ Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching
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HAF2026RJ
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Drain current
ID1
0.25
—
—
A
ID2
—
—
10
mA
ID3
0.6
—
1.0
A
Drain to source breakdown
V(BR)DSS
60
—
—
V
voltage
Gate to source breakdown
V(BR)GSS
16
—
—
V
voltage
V(BR)GSS
–2.5
—
—
V
Gate to source leak current
IGSS1
—
—
100
µA
IGSS2
—
—
50
µA
IGSS3
—
—
1
µA
IGSS4
—
—
–100
µA
Input current (shut down)
IGS(OP)1
—
0.53
—
mA
Zero gate voltage drain
current
IGS(OP)2
—
0.23
—
mA
IDSS1
—
—
10
µA
IDSS2
—
—
10
µA
Gate to source cut off voltage VGS(off)
1.4
—
2.5
V
Forward transfer admittance
|yfs|
0.26
1.3
—
S
Static drain to source on state RDS(on)
—
200
300
mΩ
resistance
RDS(on)
—
150
210
mΩ
Output capacitance
Coss
—
140
—
pF
Turn-on delay time
Rise time
Turn off delay time
Fall time
td(on)
—
2.9
—
µs
tr
—
11
—
µs
td(off)
—
0.9
—
µs
tf
—
1
—
µs
Body-drain diode forward
voltage
VDF
—
0.9
—
V
Body-drain diode reverse
recovery time
trr
—
61
—
ns
Over load shut down
operation time note5
tos1
—
85
—
ms
tos2
—
30
—
ms
Notes: 4. Pulse test
5. Including the junction temperature rise of the over lorded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
VGS = 5 V, VDS = 3 V
ID = 10 mA, VGS = 0
IG = 800 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0, Ta = 125°C
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VDS = 10 VNote4
ID = 0.5 A, VGS = 5 VNote4
ID = 0.5 A, VGS = 10 VNote4
VDS = 10 V, VGS = 0, f = 1MHz
VGS = 5 V, ID= 0.5 A, RL = 60 Ω
IF = 1 A, VGS = 0
IF = 1 A, VGS = 0, diF/dt = 50 A/µs
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Rev.2.00 Jun 02, 2006 page 3 of 8
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