HAF2026RJ Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAF2026RJ
Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
300
V_GS = 5 V
200
100 _{VGS = 10 V}
I_D = 0.5 A, 0.2 A
I_D = 0.5 A, 0.2 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body to Drain Diode Reverse
Recovery Time
1000
500
200
100
50
20
10
5
2
1
0.01 0.02
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
0.05 0.1 0.2 0.5 1
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
Pulse Test
0.8
0.6
V_GS = 5 V
0V
0.4
0.2
0
0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
V_DS =10 V
3 _{Pulse Test}
Tc = –25°C
1
0.3
25°C
75°C
0.1
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
Drain Current I_D (A)
Switching Characteristics
100
V_GS = 5 V, V_DD = 30 V
PW = 300 µs, duty < 1 %
30
10
3
tr
t_d(on)
1
tf
td(off)
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3 1
Drain Current I_D (A)
1000
Typical capacitance vs.
Drain to Source Voltage
100
10
V_GS = 0
f = 1 MHz
1
0
10
20
30 40 50
Drain to Source V_DS (V)
Rev.2.00 Jun 02, 2006 page 5 of 8