HAF1001 Datasheet, PDF (6/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

HAF1001
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
–12
–10
–8
V_DD = –36 V
–24 V
–6
–12 V
–9 V
–4
–2
0
0.0001 0.001 0.01
0.1
1
Shutdown Time of Load-Short Test PW (S)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
100
0
I_D = –5 A
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0₀^.0_.0²₁
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.50°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
–5 V
50 Ω
V_DD
= –30 V
Vin
10%
Vout
td(on)
90%
10%
tr
90%
90%
td(off)
10%
tf
Rev.4.00 Apr 27, 2006 page 6 of 7