HAF1001 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

HAF1001
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
Pch ^{Note 2}
Tch
Tstg
Value
–60
–16
3
–15
–30
–15
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_{IH (sd) 1}
I_{IH (sd) 2}
Tsd
V_OP
Min
–3.5
—
—
—
—
—
—
—
–3.5
Typ
—
—
—
—
—
–0.8
–0.35
175
—
Max
—
–1.2
–100
–50
–1
—
—
—
–13
Unit
V
V
µA
µA
µA
mA
mA
°C
V
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
Rev.4.00 Apr 27, 2006 page 2 of 7