HAF1001 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

HAF1001
Static Drain to Source on State Resistance
vs. Temperature
0.20
I_D = –10 A
0.16
–5 A
0.12
V_GS = –4 V
–10 A
–2 A
0.08
–2, –5 A
–10 V
0.04
0
–40 0
Pulse Test
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20 _{di / dt = 50 A / µs}
V_GS = 0, Ta = 25°C
10
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20 –50
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
–20
Pulse Test
–16
–12 ^VGS ^{= –5 V}
0V
–8
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
50
V_DS = –10 V
Pulse Test
20
Tc = –25°C
10
5
25°C
75°C
2
1
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I_D (A)
Switching Characteristics
100
50
tf
td(off)
20
tr
10
5
td(on)
2
1
V_GS = –5 V, V_DD = –30 V
PW = 300 µs, duty ≤ 1 %
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
V_GS = 0
f = 1 MHz
100
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
Rev.4.00 Apr 27, 2006 page 5 of 7