HAF1001 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

HAF1001
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–10 V
–40
–8 V
–6 V
–30
–5 V
–20
–4 V
–3.5 V
–10
V_GS = –3 V
Pulse Test
0
0
–2 –4
–6
–8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
I_D = –10 A
–0.4
–5 A
–2 A
0
0
–2 –4 –6
–8 –10
Gate to Source Voltage V_GS (V)
Rev.4.00 Apr 27, 2006 page 4 of 7
Maximum Safe Operation Area
–500
–200
–100
Thermal shut down
Operation area
20 µs
–50
–20
100 _µs
–10
–5
–2
–1
Operation in
is limited by
DC
this
R_DS
OperatPioWn
area
(on)
(=T1c10m=ms25s_°C)
–0.5 _{Ta = 25°C}
–0.3
–0.3 –0.5 –1 –2 –5 –10 –20 –50 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–20
–16
Tc = –25°C
25°C
–12
–8
75°C
–4
V_DS = –10 V
Pulse Test
0
0
–1
–2 –3
–4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = –4 V
–10 V
0.02
0.01
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I_D (A)