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HAF1001 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability | |||
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HAF1001
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
ID1
â7
â
â
A VGS = â3.5 V, VDS = â2 V
ID2
â
â â10 mA VGS = â1.2 V, VDS = â2 V
V (BR) DSS â60
â
â
V ID = â10 mA, VGS = 0
V (BR) GSS â16
â
â
V IG = â100 µA, VDS = 0
V (BR) GSS
3
â
â
V IG = 100 µA, VDS = 0
IGSS1
â
â â100 µA VGS = â8 V, VDS = 0
IGSS2
â
â
â50
µA VGS = â3.5 V, VDS = 0
IGSS3
â
â
â1
µA VGS = â1.2 V, VDS = 0
IGSS4
â
â
100
µA VGS = 2.4 V, VDS = 0
IGS (op) 1
â â0.8 â
mA VGS = â8 V, VDS = 0
IGS (op) 2
â â0.35 â
mA VGS = â3.5 V, VDS = 0
IDSS
â
â â250 µA VDS = â50 V, VGS = 0
VGS (off)
RDS (on)
RDS (on)
|yfs|
â1.1
â
â
5
â â2.25 V ID = â1 mA, VDS = â10 V
100 130 m⦠ID = â7.5 A, VGS = â4 V Note 3
70
90
m⦠ID = â7.5 A, VGS = â10 V Note 3
10
â
S
ID = â7.5 A, VDS = â10 V Note 3
Coss
â 610 â
pF VDS = â10 V, VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Over load shut down operation time Note4
Notes: 3. Pulse test
td (on)
tr
td (off)
tf
VDF
trr
tos1
tos2
â 7.5 â
â
36
â
â
32
â
â
29
â
â â1.0 â
â 200 â
â 3.7 â
â
1
â
µs ID = â7.5 A
µs VGS = â5 V
µs RL = 4 â¦
µs
V IF = â15 A, VGS = 0
ns IF = â15 A, VGS = 0
diF/dt = 50 A/µs
ms VGS = â5 V, VDD = â12 V
ms VGS = â5 V, VDD = â24 V
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.4.00 Apr 27, 2006 page 3 of 7
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