RJJ1011DPD Datasheet, PDF (5/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ1011DPD
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
Tc = 25°C
–4
–5 V
–3
–10 V
–2
V_GS = 0, 5 V
–1
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SDF (V)
Avalanche Current vs. Case Temperature
–7
L = 100 µH
–6
–5
–4
–3
–2
–1
–0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1 ^D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1shot pulse
0.01
100 µ
1m
θ_{ch – c(t) =} γ _{s (t) •} θ _{ch – c}
θ_{ch – c = 4.17°C/W, Tc = 25°C}
P_DM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
25 Ω
D.U.T.
Vout
Monitor
R_L
Vin
–10 V
V_DD
= –50 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
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