RJJ1011DPD Datasheet, PDF (4/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ1011DPD
Drain to Source on State Resistance
vs. Temperature
0.5
V_GS = –10 V
Pulse Test
0.4
I_D = –3 A
0.3
0.2
0.1
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverce Recovery Time
100
di/dt = 100 A/ µs
V_GS = 0 V
Ta = 25°C
10
–0.1
–1
–10
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
0
0
–40
–25 V
–50 V
–80
V_DD = –80 V
–120
V_DD = –80 V ^–4
–50 V
–25 V
–8
–12
–160 ^{ID = –2.3 A}
0
4
8
12 16
Gate Charge Qg (nc)
–16
20
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25°C
25°C
75°C
1
0.1
–0.1
V_DS = –10 V
Pulse Test
–1
–10
Drain Current I_D (A)
–100
Typical Capacitance vs.
Drain to Source Voltage
10000
V_GS = 0
f = 1 MHz
1000
Ciss
100
Coss
Crss
10
–0.1
–1
–10
–100
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
tr
tf
td(off)
td(on)
10
–1
V_GS = –10 V, V_DD = –50 V
P_W = 5 µs, duty ≤ 1%
R_G = 25 Ω
–10
–100
Drain Current I_D (A)
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
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