RJJ1011DPD Datasheet, PDF (3/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ1011DPD
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10
–10 V
–8
–4.5 V
–5 V
–4 V
–6
–3.6 V
–4
–2
V_GS = –3 V
Pulse Test
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs.Gate to Source Voltage
1.0
Pulse Test
Tc = 25°C
0.8
0.6
0.4
I_D = –6 A
–1 A
0.2
–3 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
–100
10 µs
–10
100 µs
–1
–0.1
Operation in
this area is
limited by R_DS(on)
1 ms
PW = 10 ms
Ta = 25°C
1 shot Pulse
–0.01
–0.1
–1
–10
–100 –1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
–2 _75°C
25°C
Tc = –25°C
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
Tc = 25°C
V_GS = –4.5 V
–10 V
0.1
–0.1
–1
–10
Drain Current I_D (A)
–100
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
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