RJJ1011DPD Datasheet, PDF (2/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ1011DPD
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate-source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Symbol
V_(BR)DSS
V_(BR)GSS
I_DSS
I_GSS
V_GS(off)
R_DS(on)
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_SD
Min.
–100
±20
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
–1.9
0.26
0.30
930
80
50
10
15
65
35
–0.85
Max.
—
—
–1
±10
–2.5
0.30
0.50
—
—
—
—
—
—
—
–1.2
Unit
V
V
mA
µA
V
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
(Tc = 25°C)
Conditions
I_D = –1 mA, V_GS = 0 V
I_G = ±100 µA, V_DS = 0 V
V_DS = –100 V, V_GS = 0 V
V_GS = ±16 V, V_DS = 0 V
I_D = –1 mA, V_DS = –10 V
I_D = –3 A, V_GS = –10 V
I_D = –3 A, V_GS = –4.5 V
V_DS = –10 V
V_GS = 0 V
f = 1 MHz
V_DD = –50 V
I_D = –3 A
V_GS = –10 V
R_G = 25 Ω
I_S = –3 A, V_GS = 0 V
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
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