RJJ1011DPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ1011DPD
P Channel Power MOS FET
High Speed Switching
Features
• V_DSS : –100 V
• R_DS(on) : 0.30 Ω (Max)
• I_D : –6 A
• Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
3
4
12 ₃
1
2, 4
Application
• Motor control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (Pulsed)*¹
Avalanche current
Channel dissipation
Channel to case thermal impedance
V_DSS
V_GSS
I_D
I_D(pulse)
I_AP
P_ch
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. Pulse width limited by safe operating area.
Ratings
–100
±20
–6
–12
–6
30
4.17
–55 to +150
–55 to +150
REJ03G1623-0200
Rev.2.00
Jun 16, 2008
1. Gate
2. Drain
3. Source
4. Drain
Unit
V
V
A
A
A
W
°C/W
°C
°C
(Tc = 25°C)
Conditions
V_GS = 0 V
V_DS = 0 V
L = 100 µH
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
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