RJJ0601JPN Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

RJJ0601JPN
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 ^D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
1shot ^pulse
0.001
0.01
0.1
θch - c(t) = γs (t) x θch - c
θch - c = 1.39°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1
10
100
Pulse Width PW (mS)
1000
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
–10 V
V_DD
= –30 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
10%
10%
td(on)
tr
td(off)
tf
REJ03G1602-0100 Rev.1.00 Nov 21, 2007
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