RJJ0601JPN Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

RJJ0601JPN
Main Characteristics
Power vs. Temperature Derating
100
80
60
40
20
0 25 50 75 100 125 150
Case Temperature Tc (°C)
−100
Typical Output Characteristics
−4.5 V
−10 V
−3.0 V
−50
V_GS = −2.7 V
Pulse Test
0
−5
−10
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
V_GS = −4.5 V
10
−10 V
1
−1
−10
−100
−1000
Drain Current I_D (A)
Maximum Safe Operation Area
−1000
10 µs
−100
100 _µs
−10
−1
−0.1
Operation in
this area is
limited by R_{DS (on)}
Ta = 25°C
−0.01 ^{1 shot Pulse}
−0.1
−1
−10
−100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
−1000
V_DS = −10 V
−100 Pulse Test
−10
−1
−0.1
−0.01
Tc = 150°C
25°C
−0.001
−40°C
−0.0001
0
−1
−2
−3
−4
−5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
25
I_D = −45 A
20
15
V_GS = −4.5 V
10
5
−10 V
Pulse Test
0
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1602-0100 Rev.1.00 Nov 21, 2007
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