RJJ0601JPN Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

RJJ0601JPN
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 8.2 mΩ typ.
• Capable of 4.5 V gate drive
• High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
2
1
G
123
3
S
REJ03G1602-0100
Rev.1.00
Nov 21, 2007
1. Gate
2. Drain
(Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I ^Note3
AP
E ^Note3
AR
Pch^Note2
Tch
Tstg
Value
–60
±20
–90
–360
–90
–40
137
90
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1602-0100 Rev.1.00 Nov 21, 2007
Page 1 of 6