RJJ0601JPN Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

RJJ0601JPN
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_DSS
I_GSS
V_GS(off)
R_DS(on)
R_DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
–60
±20
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
8.2
10
8800
950
600
150
25
23
25
30
290
135
–0.96
45
Max
—
—
–10
±10
–2.5
10
15
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_DS = –60 V, V_GS = 0
V_GS = ±16 V, V_DS = 0
V_DS = –10 V, I_D = –1 mA^Note4
I_D = –45 A, V_GS= –10 V^Note4
I_D = –45 A, V_GS = –4.5 V^Note4
V_DS = –10 V, V_GS = 0
f = 1 MHz
V_DD = –25 V, V_GS = –10 V,
I_D = –90 A
V_GS = –10 V, I_D= –45 A,
V_DD = –30 V, R_G = 4.7 Ω
I_F = –90 A, V_GS = 0
I_F = –90 A, V_GS = 0,
di_F/dt = 100 A/µs
REJ03G1602-0100 Rev.1.00 Nov 21, 2007
Page 2 of 6