RJJ0315DPA Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

RJJ0315DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 μ
100 μ
θch − c(t) = γs (t) • θch − c
θch − c = 4.17°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
-10 V
V_DS
= -10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
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