RJJ0315DPA Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

RJJ0315DPA
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
-50
-4.5 V ^{-3.1 V}
-10 V
-40
Pulse Test
-2.9 V
-30
-20
-2.7 V
-10
V_GS = -2.5 V
0
-2
-4
-6
-8 -10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-320
Pulse Test
-240
-160
I_D = -20 A
-80
-10 A
-5 A
0
-4
-8 -12 -16 -20
Gate to Source Voltage V_GS (V)
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
Maximum Safe Operation Area
-1000
-100
1 _ms
-10
PW = 10 ms
Operation in
-1 ^{this area is}
limited by R_DS(on)
Tc = 25 °C
-0.1 ^{1 shot Pulse}
-0.1
-1
-10
-100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
-50
V_DS = -10 V
Pulse Test
-40
-30
-20
-10
Tc = 75°C
25°C
–25°C
0
-1
-2
-3 -4
-5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = -4.5 V
-10 V
3
1
-1 -3
-10 -30 -100 -300 -1000
Drain Current I_D (A)
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