RJJ0315DPA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

RJJ0315DPA
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 4.8 m typ. (at V_GS = -10 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5678
4
G
4321
56 7 8
DD D D
SSS
12 3
Datasheet
REJ03G1920-0200
Rev.2.00
Apr 27, 2010
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10s, duty cycle  1 %
2. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch ^Note2
Tch
Tstg
Ratings
–30
-20/+10
–35
–140
–35
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
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