RJJ0315DPA Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

RJJ0315DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
–30
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.8
6.8
50
4300
930
880
48
14
20
21
45
115
71
–0.87
100
Max
—
0.1
–1
–2.5
5.9
10
—
—
—
—
—
—
—
—
—
—
—
–1.13
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = –10mA, V_GS = 0
V_GS = –20,+10V, V_DS = 0
V_DS = –30V, V_GS = 0
V_DS = –10V, I _D = –1mA
I_D = –17.5A, V_GS = –10V ^Note4
I_D = –17.5A, V_GS = –4.5V^Note4
I_D = –17.5A, V_DS = –10V ^Note4
V_DS = –10V
V_GS = 0
f = 1MHz
V_DD = –10 V
V_GS = –4.5 V
I_D = –35 A
V_GS = –10V, I_D = –17.5A
V_DD  –10V
R_L = 0.57 
R_g = 4.7 
IF = –35 A, V_GS = 0 ^Note4
IF =–35 A, V_GS = 0
diF/ dt = –100A/µs
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
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