RJJ0315DPA Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

RJJ0315DPA
Static Drain to Source On State Resistance
vs. Temperature
20
Pulse Test
16
12
I_D = -5 A, -10A, -20 A
8 ^{VGS = -4.5 V}
4
-10 V
-5 A, -10A, -20 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = -25 V
-10 V
-10
-5 V
-4
-20
-8
V_DS
-30
V_DD = -25 V
-10 V
-40
-5 V
-12
V_{GS -16}
-50 ^{ID = -35 A}
-20
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
100
Tc = -25°C
10
25°C
75°C
1
V_DS = -10 V
Pulse Test
0.1
-0.1 -0.3 -1 -3 -10 -30 -100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Ciss
Coss
Crss
100
30 _{VGS = 0}
f = 1 MHz
10
0
-10
-20
-30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
-50
-10 V
-40
-5 V
Pulse Test
-30
-20
-10
V_GS = 0, 5 V
0
-0.4 -0.8 -1.2 -1.6 -2.0
REJ03G1920-0200 Rev.2.00
Apr 27, 2010
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