RJF0409JSP_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 40V, 5A Silicon N Channel Thermal FET Power Switching

RJF0409JSP
Preliminary
Forward transfer admittance vs.
Drain Current
100
Shutdown Case Temperature vs.
Gate to Source Voltage
200
Tc = –40°C
10
25°C
150°C
1
0.1
0.1
V_DS = 10 V
Pulse Test
1
10
Drain Current I_D (A)
180
160
140
120
I_D = 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch-f(t) = γs (t) · θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operation of 2 devices; allowable value per device)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch-f(t) = γs (t) · θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
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