RJF0409JSP_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 40V, 5A Silicon N Channel Thermal FET Power Switching

RJF0409JSP
Static Drain to Source On State Resistance
vs. Temperature
200
Pulse Test
5A
150
I_D = 1 A, 2.5 A
100 _{VGS = 5 V}
50
10 V
I_D = 1 A, 2.5 A, 5 A
0
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
10
tr
td(off)
tf
1
td(on)
0.1
0.1
V_GS = 10 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1 %
1
10
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2
5V
V_GS = 0 V
1
Pulse Test
0
0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage V_SD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
di / dt = 50 A /μs
10
V_GS = 0
0.1
1
10
Reverse Drain Current I_DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
100
Coss
10
0
10
20
30
40
Drain to Source Voltage V_DS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
V_DD = 16 V
10
8
6
4
2
0
0.1
1
10
Shutdown Time of Load-Short Test Pw (ms)
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
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