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RJF0409JSP_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 40V, 5A Silicon N Channel Thermal FET Power Switching
Preliminary Datasheet
RJF0409JSP
40V, 5A Silicon N Channel Thermal FET
Power Switching
R07DS1228EJ0200
Rev.2.00
Dec 02, 2014
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• High density mounting
• Power supply voltage applies 12 V.
• AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
1 234
2
Current
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
78
4
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
56
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
1
MOS1
3
MOS2
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
40
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
5
Body-drain diode reverse drain current
IDR
5
Avalanche current
IAP Note 3
1.5
Avalanche energy
EAR Note 3
15
Channel dissipation
Pch Note 1
1
Channel dissipation
Pch Note 2
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. Tch = 25°C, Rg ≥ 50 Ω
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
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