RJF0409JSP_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 40V, 5A Silicon N Channel Thermal FET Power Switching

RJF0409JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 5. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
I_{D limt}
Min
3.5
—
—
—
—
—
—
—
3.5
5
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Vi = 1.2 V, V_DS = 0
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Channel temperature
V_GS = 5 V, V_DS = 10 V ^{Note 5}
Electrical Characteristics
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
I_D1
I_D2
I_D3
V_(BR)DSS
Min
—
—
5
40
V_(BR)GSS
V_(BR)GSS
I_GSS1
I_GSS2
I_GSS3
I_GSS4
I_GS(OP)1
I_GS(OP)2
I_DSS
16
–2.5
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
Max
Unit
14
A
10
mA
—
A
—
V
—
V
—
V
100
μA
50
μA
1
μA
–100
μA
—
mA
—
mA
10
μA
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
V_GS(off)
1.4
—
2.2
V
|y_fs|
4
7
—
S
R_DS(on)
—
81
100
mΩ
R_DS(on)
—
70
86
mΩ
Coss
—
245
—
pF
Turn-on delay time
t_d(on)
—
1.65
—
μs
Rise time
t_r
—
4.50
—
μs
Turn-off delay time
t_d(off)
—
2.35
—
μs
Fall time
t_f
—
3.0
—
μs
Body-drain diode forward voltage
V_DF
—
0.89
—
V
Body-drain diode reverse
t_rr
—
106
—
ns
recovery time
Over load shut down
operation time ^{Note 7}
t_os
—
0.37
—
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = 3.5 V, V_DS = 10 V ^{Note 6}
V_GS = 1.2 V, V_DS = 10 V
V_GS = 5 V, V_DS = 10 V ^{Note 6}
I_D = 10 mA, V_GS = 0
I_G = 800 μA, V_DS = 0
I_G = –100 μA, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_GS = 1.2 V, V_DS = 0
V_GS =– 2.4 V, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_DS = 32 V, V_GS = 0
Ta = 125°C
I_D = 1 mA, V_DS = 10 V
I_D = 2.5 A, V_DS = 10 V
I_D = 2.5 A, V_GS = 5 V ^{Note 6}
I_D = 2.5 A, V_GS = 10 V ^{Note 6}
V_DS = 10 V, V_GS = 0, f = 1MHz
I_D= 2.5 A, V_GS = 10 V
R_L = 12 Ω
I_F = 5 A, V_GS = 0 ^{Note 6}
I_F = 5 A, V_GS = 0
di_F/dt = 50 A/μs
V_GS = 5 V, V_DD = 16 V
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
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