RJE0605JPD_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0605JPD
Preliminary
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−16
−14
−12
−10
−8
−6
V_DD = −16 V
−4
−2
0
1
10
100
Shutdown Time of Load-Short Test Pw (ms)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = −1 A
dv / dt
V_GS ≥ 500 V/ ms
100
0
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.2
Tc = 25°C
0.1
0.1
0.05
0.02
0.01
0.01
1shot ^pulse
0.001
10 μ
100 μ
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
50 Ω
–10 V
V_DD
= –30 V
Vin
10%
Vout
90%
10%
90%
90%
10%
td(on)
tr
td(off)
tf
REJ03G1803-0100 Rev.1.00
Apr 01, 2010
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